http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005004185-A2

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filingDate 2004-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a188bf099cc5de47c718c469bd6ab26
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publicationDate 2005-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2005004185-A2
titleOfInvention Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method
abstract An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electronemissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300 °C to 500 °C compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface arda for growing the electronemissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.
priorityDate 2003-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 25.