http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004112056-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44b2ac87aeadb161b83426d9cf6c4bdc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-10 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-10 |
| filingDate | 2004-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbe8680dd899f6101009b1a9bd56e2a6 |
| publicationDate | 2004-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2004112056-A1 |
| titleOfInvention | Multilayer unit |
| abstract | A multilayer unit is disclosed which comprises a conductive supporting substrate and a dielectric layer. The supporting substrate is composed of a material on which a dielectric material containing a bismuth lamellar compound can be epitaxially grown, and at least the surface of the supporting substrate is oriented in the [001] direction. The dielectric layer is formed by epitaxially growing the dielectric material containing a bismuth lamellar compound on the supporting substrate, and is composed of the dielectric material containing a bismuth lamellar compound which is oriented in the [001] direction. The multilayer unit having such a structure comprises the dielectric layer containing the bismuth lamellar compound oriented along the c-axis. Consequently, ferroelectric properties of the bismuth lamellar compound in the dielectric layer are suppressed, and thus paraelectric properties thereof are sufficiently exhibited, thereby enabling to produce a small-sized thin film capacitor with high capacity and excellent dielectric characteristics. |
| priorityDate | 2003-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 100.