| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcdb97a4f4f9afb331fb9596faa83e7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_994de0e74e58edf232ab67696be5fe90 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2004-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19ab24da9a4c206067d36344759d96ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_997d68f8bd296c630664a3611a312c78 |
| publicationDate |
2004-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004109790-A1 |
| titleOfInvention |
Semiconductor device and method for manufacturing same |
| abstract |
A gate insulating film is formed using a plasma on a three-dimensional silicon substrate surface having a plurality of crystal planes. The plasma gate insulating film experiences no increase in interface state in any crystal planes and has a uniform thickness even at corner portions of the three-dimensional structure. By forming a high-quality gate insulating film using a plasma, there can be obtained a semiconductor device having good characteristics. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I402943-B |
| priorityDate |
2003-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |