http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004109775-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_479789c4cae42aed4535cdf0d17ecc47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b22f3d92acc81c45eded5d192c6573ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ff81a650b70e913d3b2524b45e4c7320 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02694 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2004-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89b8a9b2f5ddf361525e639e9c114c6e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_514bffc676af68d998d15cb536ec4698 |
| publicationDate | 2004-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2004109775-A2 |
| titleOfInvention | Formation of highly dislocation free compound semiconductor on a lattice mismatched substrate |
| abstract | A highly dislocation free compound semiconductor, e.g. AlxInyGa1-x-yN (0<x, y<1), is formed on a lattice mismatched substrate, 24 e.g. Si, by first depositing a polycrystalline buffer layer 22 on the substrate. An amorphous layer 28 is then created at the interface of the substrate and the polycrystalline buffer layer, e.g. through ion implantation. A monocrystalline template layer 30 of the compound semiconductor is then deposited on the buffer layer, and an epilayer 32 of the compound semiconductor is grown on the template layer. A compound semiconductor based device structure may be formed in the epilayer. |
| priorityDate | 2003-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.