| abstract |
A method of removing a material from an oxide surface of a substrate, where the material is selected from the group consisting of photoresist, photoresist residue, etch residue, and a combination thereof, comprises first and second steps. The first step comprises maintaining a supercritical fluid, a carrier solvent, a tetra-organic ammonium fluoride, and HF in contact with the substrate until the material separates from the oxide surface, thereby forming separated material. The second step comprises removing the separated material from the vicinity of the substrate. |