Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095 |
filingDate |
2004-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c53fd1b96b9aa91f2371854dfe7903c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3d1b4a49fd1a27539f0c1f1c6c63026 |
publicationDate |
2005-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2004102274-A3 |
titleOfInvention |
Use of spin-on, photopatternable, interplayer dielectric materials and intermediate semiconductor device structure utilizing the same |
abstract |
A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The cap layer and a photoresist layer are each formed over the photopatternable layer. The cap layer absorbs or reflects radiation and protects the photopatternable layer from a first wavelength of radiation used in patterning the photoresist layer. The photopatternable, spin-on material is convertible to a silicon dioxide-based material upon exposure to a second wavelength of radiation. |
priorityDate |
2003-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |