| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd208876af4af043f973129d951f845d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a34d7d2e0d09a58cb7bf4a04c81162e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_08a7e03feaae49e4f457324a0348bd6c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2004-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2251d0197f727e7f3d8f667a7be307d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e080f93b7c48d4ff53be85aeb271498b |
| publicationDate |
2004-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004092453-A2 |
| titleOfInvention |
METHOD FOR GROWING SINGLE CRYSTAL GaN ON SILICON |
| abstract |
A method for growing a single crystal GaN film at least 2 microns thick on a Si substrate is disclosed. The method includes growing a prelayer, a buffer layer including AIN on the Si substrate and a plurality of GaN layers and AIN layers deposited alternatively on the top of the AIN buffer layer. By controlling the deposition conditions and timing of the plurality of GaN layers and AIN layers, the single crystal GaN film can be grown thicker than 2 microns without cracks or pits. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9337277-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9279192-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9738991-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9797064-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10002760-B2 |
| priorityDate |
2003-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |