| abstract |
A method for forming a vapor deposition film composed of a silicon oxide on a surface of a substrate is disclosed in which the substrate to be processed is held in a plasma processing chamber and a chemical plasma processing is conducted by supplying an organic silicon compound and an oxidizing gas into the processing chamber. By changing the supply rate of the oxidizing gas during formation of a deposition film while keeping the supply rate of the organic silicon compound gas at a certain fixed rate, there can be formed a chemical vapor deposition film which is excellent in adhesion, plasticity, flexibility, oxygen barrier property and moisture barrier property. |