Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2ae97a323ed70c2c1b3f6d9e3abd6efb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-182 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0747 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0248 |
filingDate |
2004-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a3decf5485dfc009f87b94e74a4a04e |
publicationDate |
2004-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2004086516-A1 |
titleOfInvention |
Solar cell |
abstract |
Provided is a solar cell having a silicon substrate for a solar cell, the substrate being formed by allowing a high-purity polycrystalline silicon layer to grow on a surface of a base that is sliced from a polycrystalline silicon ingot which is obtained by melting metal-grade silicon and solidifying the silicon in one direction, wherein a layer having a non-doped amorphous silicon phase and a microcrystalline silicon phase mixed together is stacked on the high-purity polycrystalline silicon layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8872021-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8217483-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9450132-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008145097-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008145097-A2 |
priorityDate |
2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |