| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9dc81a6fce6e79d06af0b95fd0fe4d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a6e484a7bd8c0a1877ef201eb82331f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f84747e8d08b1023763356d0e7d1db68 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2103-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0159
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-048 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41M5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate |
2004-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b34ec788513e5c073fdd8e72fe4824a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fd4dc53938bdf74e8c86b8e47cafd32 |
| publicationDate |
2004-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004079450-A1 |
| titleOfInvention |
Method for manufacturing a patterned structure |
| abstract |
A method for forming a micro- or nano-pattern of a material on a substrate is presented. The method utilizes a buffer layer assisted laser patterning (BLALP). A layered structure is formed on the substrate, this layered structure being in the form of spaced-apart regions of the substrate defined by the pattern to be formed, each region including a weakly physisorbed buffer layer and a layer of the material to be patterned on top of the buffer layer. A thermal process is then applied to the layered structure to remove the remaining buffer layer in said regions, and thus form a stable pattern of said material on the substrate resulting from the buffer layer assisted laser patterning. The method may utilize either positive or negative lithography. The patterning may be implemented using irradiation with a single uniform laser pulse via a standard mask used for optical lithography. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8183659-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007044035-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7993538-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8815332-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7777291-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006063098-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7435353-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8221595-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8415787-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007044035-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8508049-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7687876-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8253253-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8273257-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7977761-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7524431-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008522848-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8866307-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8106517-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9114993-B2 |
| priorityDate |
2003-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |