| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd6c9ed2d33e32e7c49c3c2de3e362c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32308 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02461 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
| filingDate |
2004-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0942ebee4f17e9d295275b931602fbb3 |
| publicationDate |
2004-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004070846-A1 |
| titleOfInvention |
Semiconductor device, production method thereof and light-emitting device |
| abstract |
A semiconductor device comprising a crystalline substrate, optionally with a crystalline layer formed thereon; a boron monophosphide or monophosphide-based mixed-crystal layer on said crystalline substrate or said crystalline layer formed thereon, said boron monophosphide or boron monophosphide-based mixed-crystal layer comprising a bottom portion of a polycrystalline boron monophosphide or boron monophosphide-based mixed-crystal layer and an upper surface portion of a single-crystal boron monophosphide or boron monophosphide-based mixed-crystal layer; and an Ohmic electrode on said boron monophosphide or boron monophosphide-based mixed-crystal layer, said Ohmic electrode being in contact with said single-crystal boron monophosphide or boron monophosphide-based mixed-crystal layer. |
| priorityDate |
2003-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |