http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004064123-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9136c645921f3ae155ae5cf93361ec5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e7be67a9b12610eea35ea17b40885060 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2bcaf91101a370a3d64e3190366357f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5cf5b55867957aac9ffcb0d51b28f66 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66325 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3b540642b5e28ac16a54a1acc986cff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adc18afe9d42901c6a06f86e2db76fcb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a078392dcd99179c2aa7f83f4fe1a4d |
| publicationDate | 2004-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2004064123-A3 |
| titleOfInvention | Method for the production of a semiconductor component |
| abstract | Disclosed is a method for the production of a semiconductor element comprising at least one first vertical power component (5, 9) and at least one lateral, active component (6) and/or at least one second vertical power component (10), between which at least one trench (2) filled with at least one type of insulation (4) is disposed. The invention also relates to a semiconductor component produced according to said method. The semiconductor component is essentially characterized by an eccentric or concentric arrangement of the respective functional elements (5, 6, 9, 10) which are respectively separated from each other by trench insulation. In order to produce one such semiconductor element, at least one trench is etched into the front side of a silicon substrate (1). Said trench fully encompasses at least one partial surface of the front side and is subsequently filled with insulation (4). In a further stage of said method, the silicon substrate (1) is extensively thinned from the rear side to the insulation (4), i.e. up to the lower side of the insulation. The power components (5, 9, 10) are contacted from the rear side. |
| priorityDate | 2003-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.