| abstract |
The rear (1b) of a semiconductor substrate (1) is fixed to the support face (11a) of a substrate support base (11) by vacuum clamping. The thickness of the semiconductor substrate (1) is uniform by planarizing the rear (1b), and the rear (1b) is forcedly free of waviness caused by the vacuum clamping to the support face (11a), so that the rear (1b) functions as the reference face of the planarization of the front (1a). In this state, Au projections (2) on the front (1a) and the surface layer of a resist mask (12) is cut with a single point tool (10) to planarize the surface of Au projections (2) and that of the resist mask (12) so as to be flat continuously. Thus, instead of CMP, the surface of a fine bump formed on a substrate is planarized at low cost low costly and speedily. |