| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2003-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b06f1606db14358bb3eb4aa46db84b5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01943bf60908e98a2ab7cdd233e222f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99fae2191455b93e72decc602fd70916 |
| publicationDate |
2004-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004059707-A2 |
| titleOfInvention |
A method and apparatus for forming a high quality low temperature silicon nitride film |
| abstract |
A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550°C) to form a silicon nitride film. The thermally deposited silicon nitride film is then treated with hydrogen radicals to form a treated silicon nitride film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005080628-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005080628-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11733464-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005066386-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7172792-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7972663-B2 |
| priorityDate |
2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |