| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7317808024e524eea40a6c5a5ad6a22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a9823fb49345c4274ed1bdc5796a937
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4f392653f8c5e931aa0ec9f19a221d14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cc901f2a1a5ddd538b516e2377a8291b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cef1f43aa7ea51e6a592082d9f2a3103 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2003-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d7203593ea9e43a73b80d26b64351a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce7115233684a45e01942dcbfd021979
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fd60a99bd6fc99b09a43aefc36de5f5 |
| publicationDate |
2004-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004057654-A2 |
| titleOfInvention |
Method of manufacturing a semiconductor device |
| abstract |
Method of manufacturing a semiconductor device, in which on a region of silicon oxide (5) situated next to a region of monocrystalline silicon (4) at the surface (3) of a semiconductor body (1), a non-monocrystalline auxiliary layer (8) is formed. The auxiliary layer is formed in two steps. In the first step, the silicon body is heated in an atmosphere comprising a gaseous arsenic compound; in the second step it is heated in an atmosphere comprising a gaseous silicon compound instead of said arsenic compound. Thus, the regions of silicon oxide are provided with an amorphous or polycrystalline silicon seed layer in a self-aligned manner. |
| priorityDate |
2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |