| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb9eda39abe9ae017bbe6a8fd63bc337 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06226 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0428 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 |
| filingDate |
2003-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be5adee48c7dd46124cf71193b690866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9da93161831644fedf7b3c8afbbc91f |
| publicationDate |
2004-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004049527-A3 |
| titleOfInvention |
High speed data channel including a cmos vcsel driver, high performance photodetector and cmos photoreceiver |
| abstract |
A high speed optical channel including an optical driver (334) and a photodetector (338) in a CMOS photoreceiver (338). The optical channel driver includes a FET driver circuit (334) driving a passive element (110) (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode (312). The VCSEL diode is biased by a bias supply. The integrated loop inductor (110) may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector (338) is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (M) «2000A) on the silicon layer (SI 230) forms a Schottky barrier diode junction which in turn forms a quantum well containing a two dimensional electron gas between the ultrathin metal electrode (M) and the Schottky barrier diode junction. |
| priorityDate |
2002-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |