Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5884e804d1f1c86f9a32fbf2fb7b6b5f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd5655064143de1c2b16dbe947e644dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_efc372ad92d75d2bc22b4d1e450dbc5f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89b32cb04ca172f59f944d1bceda6a7f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c253b9ab7bf274a3e64de7cd6e874bd5 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F8-02 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F8-02 |
filingDate |
2003-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9440c02ec02c983912aff4b96aa142e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8604b61e01a8a670bb900d665106cd21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1487b3a03fe5c24dbc815eb474a46d67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ca259d91be507749a31240462dd0595 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65d6a0a797039677583cabdc89011403 |
publicationDate |
2004-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2004031247-A1 |
titleOfInvention |
Pentaarylcyclopentadienyl units as active units in resistive memory elements |
abstract |
The invention relates to polymers displaying a resistive hysteresis effect. The polymers comprise a polymer backbone onto which lateral pentaarylcyclopentadienyl groups are bonded. A resistive memory element may be produced by means of the polymer, which contains the polymer as storage medium. By application of a voltage, the memory element may be switched from a non-conducting to a conducting state. |
priorityDate |
2002-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |