| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_76ba102ea9c02b6633d64bf09c5b89a4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L-
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate |
2003-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f6e0357a79c65e2b2d56f4daab74dac |
| publicationDate |
2004-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004030041-B1 |
| titleOfInvention |
High selectivity and high planarity dielectric polishing |
| abstract |
A slurry includes a plurality of particles and at least one selective adsorption additive. The particles are preferably composite particles including a core surrounded by a shell provided by the selective adsorption additive. The slurry can be used to polish a structure including silicon dioxide or a low K dielectric film and a silicon nitride containing film, such as to form a shallow trench isolation (STI) structure or a metal-dielectric structure. The silicon nitride containing film surface substantially adsorbs the selective adsorption additive, whereas the silicon dioxide or low K dielectric film shows non-substantial adsorption characteristics to the adsorption additive. In another embodiment of the invention, silicon dioxide or low K dielectric film shows non-substantial adsorption of the selective adsorption additive at a pressure above a predetermined first pressure, and substantial adsorption of the selective adsorption additive for pressures below a predetermined second pressure, where the first pressure is greater than the second pressure. |
| priorityDate |
2002-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |