http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004029718-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate | 2003-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b88bc9d6350d48f224ba79cb79b77e15 |
| publicationDate | 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2004029718-A1 |
| titleOfInvention | Highly sensitive and high-resolution photoresist for ion projection lithography |
| abstract | The invention relates to a photoresist for ion projection lithography and to a method for structuring substrates during which the inventive photoresist is used. The photoresist contains a triphenylsulfonium perfluoroalkane sulfonate serving as a photo acid and triphenylsulfonium acetate serving as a photo base. The photoresist exhibits a very high exposure sensitivity and is thus excellently suited for use in ion projection lithography. A resolution of less than 90 nm can be obtained with a sensitivity of < 4 µC/cm2. |
| priorityDate | 2002-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.