Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_793f9e3c047620f165b4f70e5e3087a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7186078942e01ea1b800da49769bec58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_da6ed2ea7c77e9503b9fb29c69418741 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_db14a387a9f0ca728ada992078d552a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a34d7d2e0d09a58cb7bf4a04c81162e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9190aafae5beced739c2581e7d78efb2 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-314 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
filingDate |
2002-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f88f410fb3fe608709cffd487fa96706 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbabfeae2b56953f1303354752a3a03f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4d378c5107fa216a5b7d5bfdfcdd583 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a54699511d57bf4c43b529eb97d1038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42914124d53400b73694c5339c304642 |
publicationDate |
2004-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2004027850-A1 |
titleOfInvention |
Interlayer adhesion promoter for low k materials |
abstract |
The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7358300-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7682701-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102110669-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7687590-B2 |
priorityDate |
2002-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |