http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004021420-A9
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8381805eba6d034fc77bd230dd02e6e2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76256 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2003-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8189a4438dee85dece7a6bd665af1422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81aa12d8b329fd124b6336c6956132f3 |
| publicationDate | 2004-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2004021420-A9 |
| titleOfInvention | Fabrication method for a monocrystalline semiconductor layer on a substrate |
| abstract | A method is disclosed for creating a transferred composite in accordance with an embodiment of the invention. The method includes the steps of depositing a buffer structure that on a first substrate; depositing a bonding structure including at least one layer of a strained semiconductor material on the buffer structure, wafer bonding the exposed surface of the bonding structure to a second substrate to form a wafer bonded pair; and removing the first substrate and at least a portion of the buffer structure. The layer of a strained semiconductor material has a thickness that is greater than the equilibrium critical thickness of said layer of strained semiconductor material, in accordance with an embodiment of the invention whereby the strained semiconductor layer is grown at low temperatures. |
| priorityDate | 2002-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.