| abstract |
Chemical vapor deposition (330) methods are used to deposit amorphous silicon-containing films (340) over various substrates (310, 320). Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces (320, 310), high deposition rates, and higher manufacturing productivity. Preferably, the deposited amorphous silicon-containing film (340) is annealed to produce crystalline regions (360) over all or part of an underlying substrate (310, 320). |