http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004016825-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47e05afee63436ff5038de7d86feb80b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5235bbee761bb712acc5aa0287afa527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3b6e46872fdbcf5b14a3e39c711e8f97 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 2003-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92e889011a5a6823585e4b917d910298 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db1c3def9d2bb6402f20d4578d806781 |
| publicationDate | 2004-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2004016825-A1 |
| titleOfInvention | Hafnium silicide target and method for preparation thereof |
| abstract | A hafnium silicide target for forming a gate oxide film, characterized in that it has a composition of HfSi0.82-0.98 and has an oxygen content of 500 to 10000 ppm; and a method for preparing the hafnium silicide target which comprises synthesizing a powder having a composition of HfSi0.82-0.98, followed by pulverization into a powder of 100 mesh or less, and subjecting the resultant powder to a hot pressing or hot hydrostatic pressing (HIP) at 1700 to 2120°C under 150 to 2000 kgf/cm2. The hafnium silicide target is suitable for forming a HfSiO film and a HfSiON film which can be used as a high dielectric gate insulating film having characteristics sufficient to be used in place of a SiO2 film and a SiON film, respectively, exhibits excellent resistance to embrittlement, is reduced in the formation of particles, and can be prepared with no danger of explosion or the like. |
| priorityDate | 2002-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.