| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F1-0222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate |
2001-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1fa2799da95711adfc2e851db3bbbcf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_915b71c4e54c0099b1b6a52be69ce06e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36499da9e22c4e804f1bba4e8632cf61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f786f5e16768ff4923cd6e1d2f62ab1e |
| publicationDate |
2004-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2004015854-A2 |
| titleOfInvention |
Monolithic, software-definable circuit including a power amplifier |
| abstract |
A monolithic, software-definable, power amplifier is provided. According to one embodiment of the invention, power amplifier circuits (3900) can be tuned to the most efficient power amplification characteristics as determined by a digital microprocessor (3912) based on varying data. The data may relate to user density, carrier frequency and spectral band. The power amplifier circuits may also be formed on semiconductor structures that include monocrystalline silicon substrates (3910) and layers of monocrystalline compound semiconductors (3920). In these structures, the power amplifier (3900) may be integrated in a single integrated circuit wherein portions of the power amplifier circuits (3900) may be formed on the silicon substrate (3910) and portions may be formed on the compound semiconductor layer (3920). This configuration may substantially increase efficiency of the integrated power amplifier according to the invention. |
| priorityDate |
2001-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |