| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bae8b7d9b93209e05abbd6572644f139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3a715d6b2d5aba64e260cae869335ff |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 |
| filingDate |
2003-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e80ec6357b51fff2eaa82f2ca86b63f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39b31d38b8f679f599cafa0c89ac97df |
| publicationDate |
2004-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03102690-B1 |
| titleOfInvention |
Method for producing photoresist masks for structuring semiconductor substrates by means of optical lithography |
| abstract |
The invention relates to a method for producing photoresist masks for structuring semiconductors. According to the inventive method, a resist comprising a polymer with silicon-containing groups is used. The silicon atoms in an oxygen-containing plasma are converted into silicon dioxide for the structuring process, said silicon dioxide protecting the regions of the absorber, which are arranged beneath the silicon dioxide, from being eroded by the plasma. |
| priorityDate |
2002-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |