| abstract |
A semiconductor device composed of one semiconductor chip where an imaging region such as a CMOS solid-state imaging element or a DRAM hybrid logic LSI is formed, an imaging region in which a MOS transistor of an LDD structure with no metal silicide layer is fabricated is formed, a region such as a DRAM cell is formed, and a region of a logic circuit in which a MOS transistor of an LDD structure with a metal silicide layer is formed. Its manufacturing method and an electronic device mounted with the semiconductor device are also disclosed. By using insulating films, the side wall of a gate electrode is formed in the region where the metal silicide layer is formed is formed by etch-back of the insulting films or a single-layer film, and the side wall of an upper insulating film is formed on a lower insulating film covering the surface in the region where no metal silicide, or the insulating films are left as there are, thereby fabricating the semiconductor device. |