| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e52f9af3f5294c96a58ecb91847a2a83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed89ca88042d3b6f7afc21d7b6dd7b87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5bd900185cb3e6bf7f1071dbff605a2f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 |
| filingDate |
2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9b36a24c1eca7b1a212ca17df779cab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a69737b37c4ac6d173e9eff7e8827c0 |
| publicationDate |
2003-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03096397-A1 |
| titleOfInvention |
Methods and systems for dopant profiling |
| abstract |
A method for activating a first ionic species implanted in a semiconductor, including annealing the semiconductor using a controlled diffusion annealing, and controlling the oxygen content during the annealing to redistribute the first ionic species such that the abruptness of the implanted profile is increased after the annealing. Also, a method is provided for forming a junction in a semiconductor, including implanting a first ionic species in the semiconductor, post-implanting at least one second ionic species where the at least one second ionic species includes at least one of an atomic weight and a molecular weight that is substantially the same or greater than at least one of the first ionic species, atomic weight and molecular weight, and, annealing the semiconductor using a controlled diffusion annealing, where the abruptness of the profile is decreased after annealing such that the junction dimensions are minimized with respect to the junction dimensions of the as-implanted profile of the first ionic species. |
| priorityDate |
2002-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |