http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03083926-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9261983f5253596a778b94b90e9c4b7a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6728292a022c6c19233992ea183f2374 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6d59c083d49eb87b81579a2fc23cd7fe |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2003-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1acb7d96c674d942bc7d9e9123d47d51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ea112f0ebe1eaa485775675197c5338 |
| publicationDate | 2003-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-03083926-A2 |
| titleOfInvention | The microwave enhanced method of silicon etching and the system for microwave enhanced semiconductors etching |
| abstract | A novel microwave enhanced method of semiconductor etching consisting in etching of inserted in a reaction vessel semiconductor substrates, distinguished by the fact that the alkaline solution is activated and heated with microwave energy in an activation chamber of etching solution (ZB2), while the irradiation is carried out in the microwave supplied system with controlled power and the activated and heated to a given temperature alkaline solution flows through a conduit system to the reaction vessel (NR), where the etching of semiconductor structures takes place. The microwave enhanced system for semiconductor etching, distinguished by the fact that inside the resonator chamber of microwave supplying system (UZM) there is an activation chamber of alkaline solution (ZB2), filled with alkaline solution. The chamber is connected with a conduit system with a reaction vessel (NR) where semiconductor structures are placed, provided that the activation chamber of alkaline solution is supplied with alkaline solution from the container of etching solution (ZB1), whereas the alkaline solution is taken off the reaction vessel (NR) to the end container (ZB3). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020042234-A1 |
| priorityDate | 2002-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.