| abstract |
A semiconductor laser comprising an n-type semiconductor layer (13), an active layer (101), and a p-type semiconductor layer (24) formed sequentially on a substrate (11), wherein the active layer (101) comprises a well layer of InGaN and an intermediate layer (21) of gallium nitride based compound semiconductor substantially undoped with impurities is formed between the active layer (101) and the p-type semiconductor layer (24). Lifetime of the semiconductor laser can be prolonged at the time of high optical output operation. |