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filingDate 2003-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-03073428-A1
titleOfInvention Multiple data state memory cell
abstract A programmable multiple data state memory cell including a first electrode layer formed from a first conductive material, a second electrode layer formed from a second conductive material, and a first layer of a metal-doped chalcogenide material disposed between the first and second electrode layers. The first layer providing a medium in which a conductive growth can be formed to electrically couple together the first and second electrode layers. The memory cell further includes a third electrode layer formed from a third conductive material, and a second layer of a metal-doped chalcogenide material disposed between the second and third electrode layers, the second layer providing a medium in which a conductive growth can be formed to electrically couple together the second and third electrode layers.
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