| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53233 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2003-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1a66955c727b781b6b2ec4efd488199
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f15dd3f622feee00de195011de16b947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d884d51a76916b97a879502615c700b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56d45d4ee4dc893ac41bdfcd07a4d69e |
| publicationDate |
2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03063209-A2 |
| titleOfInvention |
Copper interconnect doped with carbon and silicon |
| abstract |
An interconnect structure in a semiconductor device and its method of formation is disclosed. Embodiments comprise a carbon-doped and silicon-doped interconnect having a concentration of silicon to avoid to form a copper silicide layer between an interconnect and a passivation layer. Some embodiments provide unexpected results in electromigration reliability in regards to activation energy and/or mean time to failure. |
| priorityDate |
2002-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |