http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03062137-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8c730dbc626b84e1b14cb71e6d464958 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23e5bd41354903a58a77cb8a4c59b622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcff13f8573db698307f919e6385d5c4 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0132 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F28F2260-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0178 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-0038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F28F13-185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76208 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2003-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffae7d7ed21e93d4511bb21fe4e13a64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7d56281865dbe7867d0effc4f586f80 |
| publicationDate | 2003-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-03062137-A3 |
| titleOfInvention | Method of making a thick microstructural oxide layer and device utilizing same |
| abstract | A method of fabricating a thick silicon dioxide layer without the need for long deposition or oxidation and a device having such a layer are provided. Deep reactive ion etching (DRIE) is used to create high-aspect ratio openings or trenches and microstructures or silicon pillars, which are then oxidized and/or refilled with LPCVD oxide or other deposited silicon oxide films to create layers as thick as the DRIE etched depth allows. Thickness in the range of 10-100/um have been achieved. Periodic stiffeners perpendicular to the direction of the trenches are used to provide support for the pillars during oxidation. The resulting S'02 layer is impermeable and can sustain large pressure difference. Thermal tests show that such thick silicon dioxide diaphragms or layers can effectively thermally isolate heated structures from neighboring structures and devices within a distance of hundred of microns. Such S'02 diaphragms or layers of thickness 50-60f,m can sustain an extrinsic shear stress up to 3-5 Mpa. These thick insulatingmicrostructures or layers can be used in thermal, mechanical, fluidic, optical, and bio microsystems. |
| priorityDate | 2002-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.