| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebce9954defff94cb1bca12935e93324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f2c6a7df2848ac13baefa4ea2f9efca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1ad39a49dce785c663b3daa0d045a602
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b8f8081ccb98eec7ddf38530422ef35f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44e913b3e93cc2a090aee29164cc0a09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4a9cb0eaf6dc51c53d902b3cf1b6f741 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F2203-45138 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01Q23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-45475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-09 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01Q23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J5-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-112 |
| filingDate |
2002-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a591cfb7cbfd4802185632be633af0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d81d74534cc7dd631ed5d7d01b8e000c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d932ed0449cc62ebc37f47fd181a76b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14f2ac7fca174a517bb15b01d6797417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f0263c804f4339b4dfbee82036c7470 |
| publicationDate |
2003-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03047036-A1 |
| titleOfInvention |
Amplified photoconductive gate |
| abstract |
The present invention includes a semiconductor epitaxial structure optimized for photoconductive free space terahertz generation and detection; and amplifier circuits for photoconductively sampled terahertz detection which may employ the optimized epitaxial structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006059573-B3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2466686-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008031751-B3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102016011383-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012080105-A1 |
| priorityDate |
2001-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |