patent/WO-03043073-A3

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03043073-A3

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32
filingDate	2002-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a13b13b5be74d84dedd6a63fe722a35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac403b38b142e2ce65d41a9ae257430b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f85c654dd1210b433505cb841dedd7d5
publicationDate	2004-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	WO-03043073-A3
titleOfInvention	A method of depositing low k barrier layers
abstract	A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.
priorityDate	2001-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6147009-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1107303-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9941423-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6054379-A
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458394811 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863

Total number of triples: 41.