| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2ab9c1c390e54e94a866633a81e1fdd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa7ae1b74ef30d230a93910f50b5d5e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1010e3862914acdd087e73d76911ec6d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-451 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21K7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-09 |
| filingDate |
2002-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_437dff01c4bec06a97b56f351e4864e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86a082947f84222e075380233ead5b1e |
| publicationDate |
2003-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03032405-A1 |
| titleOfInvention |
Photoelectric current multiplier using molecular crystal and production method therefor |
| abstract |
A 167 μm-thick NTCDA single crystal (2) is used as a photoelectric current multiplier layer, and Au thin films are formed in thickness of 20 nm as electrodes (4, 6) on the opposite surfaces of the multiplier layer by a vapor deposition method to form a sandwich type cell. When a voltage is applied to the NTCDA single crystal (2) by electrodes (4, 6) from a dc power source (8) and a monochromatic light is applied, a multiplied photoelectric current flows between the electrodes (4, 6). A rise of this element at light-on is considerably faster than when a vapor-deposited layer is used as a photoelectric current multiplier layer to permit a faster response. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004086518-A1 |
| priorityDate |
2001-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |