http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03030185-A9

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filingDate 2002-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_730d053e91e9002b26350ffcdee54536
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publicationDate 2003-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-03030185-A9
titleOfInvention Method for implementing an efficient and economical cathode process
abstract The present writing reveals a method of fabricating a cathode requiring relatively few and somewhat simple steps. A novel etchant gas chemistry dispenses with needing a second passivation layer (PA2). A direct via is formed without a separate mask. Access and isolation features of a metallic gate (MG) are patterned in the same patterning operation as an associated passivation layer, dispensing with a need for separate patterning of each. Etching is effectuated with high selectivity for nitrides of silicon. The requirement for at least one passivation layer deposition, a direct via masking step, and separate patterning steps for the passivation layer and metallic gate are eliminated.
priorityDate 2001-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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