http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03023841-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2002-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_216e2e2d4e9423058c4d4a01503935b4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_202bbc56156318ca1cab62988b8869b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f5831425024dbe84d07da7f95304ed0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_657ea13028eddf94e830ef38a1c96ea5 |
| publicationDate | 2003-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-03023841-A1 |
| titleOfInvention | Flash step preparatory to dielectric etch |
| abstract | A dielectric plasma etch method particularly useful for assuring that residue does not form in large open pad areas used for monitoring etching of narrow via and contact holes. The main dielectric etch of the via and contact holes uses a highly polymerizing chemistry, preferably of a low-F/C fluorocarbon such as C4F6 in conjunction with O2 and Ar. A short flash step precedes the main plasma etch using a plasma of a gas less polymerizing than the gas of the main etch, and the plasma is not extinguished between the flash and main steps. The flash step may be used to remove an anti-reflection coating (ARC) covering the 10 dielectric layer and use a lean fluorocarbon, such as CF4' perhaps together with O2 and Ar . In the absence of ARC, an argon flash may be used. |
| priorityDate | 2001-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.