| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_21ed3acd34daf16e53fbe8071c0d2275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_950bce8d103dab1bd282965fde47f9f3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J9-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
2002-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be698a46581d5a20dd230fc97e90c65f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f0c3d14a2d13fdf971d0224be99a579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8250fd84824b1236fb694d6d7f16dff5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e297d9d50951abc841625b86a781132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d34725844f4edaf1e571e5f3a6934bd8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62149c624759d08e84d752bca0761c0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11fddaffe31d053a33b516691049ebe1 |
| publicationDate |
2003-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03015150-A1 |
| titleOfInvention |
Plasma curing of msq-based porous low-k film materials |
| abstract |
Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin containing at least 2 Si-CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvements in elastic modulus is typically greater than or about 100 %, and more typically greater than or about 200 %. The film is plasma cured for between about 15 and about 120 seconds at a temperature less than or about 350 °C. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealing temperature is typically less than or about 450 °C. The annealed, plasma cured film has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1464410-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005062348-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7482288-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7541296-B2 |
| priorityDate |
2001-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |