http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03003468-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ed579a25363e96fab812c8c8ac90f4f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7613 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N99-05 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 |
| filingDate | 2002-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14dca0105d036eac61e93ea9e3f75b8a |
| publicationDate | 2003-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-03003468-A1 |
| titleOfInvention | Quantum supertransistor |
| abstract | The invention discloses several variants of a quantum supertransistor. The inventive supertransistor comprises electrodes with a nanostructured material arranged therebetween, said material being consisted of clusters provided with tunnel-transparent shells. The cluster is dimensioned in such a way that it enables an electron to exhibit resonance properties. Said dimension is defined by an annular radius of the electron wave according to the formula r0 = h/(meα2c)=7.2517 nm, where h is the Planck constant, m¿e? is the electron mass, α=1/137.036 is a fine structure constant, c is the light speed. The cluster dimension is specified within the range of r0 to 4r0. The thickness of a tunnel-transparent spacing being equal to or higher than r0, thereby making it possible to develop transistors having a minimum dimension of the order of 30 nm. The shape of the electron wave makes it possible to develop a nanostructured material exhibiting quantumdimensional effects, thereby making it possible to produce transistors having an operational temperature equal of up to 325 °C and a limit operational frequency of 350 GHz, and also to create a variform memory and develop all kinds of logic devices capable to memorise a previous condition, the power being turned off. |
| priorityDate | 2001-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.