http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0250895-A2
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate | 2001-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63eaab1acff6cebfc49c480056dbbcaf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_709fa93c23a12535325271e1a74a9bea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ef7886e83ac66f9b96495ea7c4f6ced |
publicationDate | 2002-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | WO-0250895-A2 |
titleOfInvention | Controlled anneal conductors for integrated circuit interconnects |
abstract | A method is provided for manufacturing an integrated circuit on a semiconductor wafer (200) having a semiconductor substrate with a semiconductor device thereon. A dielectric layer is formed on the semiconductor substrate and an opening is formed in the dielectric layer. A barrier (226, 232) layer is deposited to line the opening. A seed layer (228, 234) is deposited on the barrier layer and securely bonds to the barrier layer. A conductor (230, 236) layer is deposited to fill the channel opening over the barrier layer. A planarization technique is used to planarize the barrier, seed layer, and conductor layers to be coplanar with the dielectric layer to form a conductor channel. The semiconductor wafer is then subjected to a two step timed anneal. |
priorityDate | 2000-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.