http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0245149-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06f6859e19dacec5a834168e491504b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d977b9173dbb48a580fd4d42adf6a5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_40d2e0f47fae3753212e3b9df82b28f6
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
filingDate 2001-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7320c39d1b01d6d0677a20873c5f0b6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df5a11ce4f19ac8ccb2792d1d7d3f31c
publicationDate 2002-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-0245149-A1
titleOfInvention Method for producing silicon wafer and silicon wafer
abstract A method for producing a silicon wafer which comprises a heat treatment step of subjecting a silicon wafer to a heat treatment in an atmosphere of a gas (G) to thereby form a new vacancy in the inside thereof, characterized in that the gas constituting the atmosphere used in the heat treatment step comprises a nitride gas having a decomposition temperature lower than the temperature at which N2 may be decomposed; and a silicon wafer produced by the method. The method allows the production of a silicon wafer through a heat treatment at a lowered temperature or for a shortened time with the suppression of slipping during the heat treatment, and also the production of a silicon wafer having good surface roughness.
priorityDate 2000-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001351917-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H1192283-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID18618944
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6336883
http://rdf.ncbi.nlm.nih.gov/pubchem/taxonomy/TAXID57005
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452580220
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559367
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5976
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/anatomy/ANATOMYID57005
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099666

Total number of triples: 33.