http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0245149-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06f6859e19dacec5a834168e491504b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d977b9173dbb48a580fd4d42adf6a5d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_40d2e0f47fae3753212e3b9df82b28f6 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
filingDate | 2001-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7320c39d1b01d6d0677a20873c5f0b6a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df5a11ce4f19ac8ccb2792d1d7d3f31c |
publicationDate | 2002-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | WO-0245149-A1 |
titleOfInvention | Method for producing silicon wafer and silicon wafer |
abstract | A method for producing a silicon wafer which comprises a heat treatment step of subjecting a silicon wafer to a heat treatment in an atmosphere of a gas (G) to thereby form a new vacancy in the inside thereof, characterized in that the gas constituting the atmosphere used in the heat treatment step comprises a nitride gas having a decomposition temperature lower than the temperature at which N2 may be decomposed; and a silicon wafer produced by the method. The method allows the production of a silicon wafer through a heat treatment at a lowered temperature or for a shortened time with the suppression of slipping during the heat treatment, and also the production of a silicon wafer having good surface roughness. |
priorityDate | 2000-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.