| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3dc64cd9ee01d14c9fc09cf36e141e74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5d1ca081e4cd0e261a7e13ce48bf7d1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2001-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4268f4052cf3555020788e5d18fac27f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5133411578b5fb0a3701236a18b559cc |
| publicationDate |
2003-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0245142-A9 |
| titleOfInvention |
Copper alloy interconnections for integrated circuits and methods of making same |
| abstract |
Formation of copper alloy interconnected lines on integrated circuits includes electroplating copper onto a seed layer wherein the concentration of the doping element or elements in the copper is controlled such that the core portion (104) of the copper interconnect line has a low concentration of the doping element or elements, while surface portions (106) of the copper interconnect line have higher concentrations of the doping element or elements. Copper alloys are plated at different current densities to provide doping element rich interfaces. In this way, electromigration resistance can be improved by having relatively higher doping concentrations at surface portions of an interconnect line while the desired low electrical resistivity of the interconnect is maintained by keeping the interior portions of the interconnect with a substantially lower doping concentration. |
| priorityDate |
2000-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |