| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a819eda0adf22936a52362eeebb9fb4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04B7-086 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04B7-0617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C26-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04W16-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04B7-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04B7-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04W52-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04W16-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04B7-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C26-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-00 |
| filingDate |
2001-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec72e4ba2190efbf38e0278dcddf17f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d6123a7ffe1d848e0fd20c50ab7e292 |
| publicationDate |
2003-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0240752-A3 |
| titleOfInvention |
Process for producing iii-v compound films by chemical deposition |
| abstract |
A process for producing crystalline III-V compound films, preferably thin films of gallium nitride and other III-V nitrides, on various single crystal substrates. The process enables the preparation of III-V compound films by the simple, direct deposition of an amorphous layer of a III-V compound precursor on a single crystal substrate (as a template). A chemical reaction followed by a single heat treatment leads to the crystallization and formation of films by pyrolysis. According to specific examples of the invention, the chemical precursors gallium dimethyl amide (Ga2[N(CH3)2]6), gallium nitrate (Ga(NO3)3), and gallium isopropoxide [Ga(OC3H7)3 are used to produce gallium nitride thin films. |
| priorityDate |
2000-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |