| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_633495f3167cc0034bb0867a78b2fcb9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5804dc2b4b13c0f68137f71efab76803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb5a0df83d823a7ca4c332aeda0ed6d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0f45be319dbe3573596bdd76e1a59bc5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2001-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94ad42d85e168d6772edf1181e4ae118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55c5a1e7d6fceed05084bf3307cc2590
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f80c6dce03211305b3d872f85a3834b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e786976e8ac35ccad82491b69a1bf4cd |
| publicationDate |
2002-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0234451-A1 |
| titleOfInvention |
Method of and structure for controlling electrode temperature |
| abstract |
A method of and a structure for controlling the temperature of an electrode (4). The electrode is heated prior to etching the first wafer and both a (temporally) stationary and a (spatially) homogeneous temperature of the silicon electrode are maintained. Resistive heater elements (1) are either embedded within the housing of the electrode (3) or formed as part of the electrode. The resistive heater elements form a heater of a multi-zone type in order to minimize the temperature non-uniformity. The resistive heater elements are divided into a plurality of zones, wherein the power to each zone can be adjusted individually, allowing the desirable temperature uniformity of the electrode to be achieved. Preheating the electrode to the appropriate operating temperature eliminates both the 'first wafer effect' and non-uniform etching of a semiconductor wafer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004032187-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7675009-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004032187-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100443235-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1507442-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1507442-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004105993-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7275309-B2 |
| priorityDate |
2000-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |