patent/WO-0219421-A1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0219421-A1

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482
classificationIPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate	2001-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fa304012a427375f90384a6cfece21e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_218dd12a8541e5803c7e5f29a607d694
publicationDate	2002-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	WO-0219421-A1
titleOfInvention	Dram fabricated on a silicon-on-insulator (soi) substrate having bi-level digit lines
abstract	A DRAM having bi-level digit lines is fabricated on a silicon-on-insulator 'SOI' substrate (12). More specifically, the digit lines of each complimentary digit line pair are positioned on opposite sides of the SOI substrate. In one embodiment, digit lines are formed between memory cell capacitors (67,68), and in a second embodiment, digit lines are formed above the capacitors.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7381627-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7939914-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007131867-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7960245-B2
priorityDate	2000-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
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isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31170 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID522684 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557764 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526467 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

Total number of triples: 42.