| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_144438cdfd820cd50dd7339af61aa3ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d49de4efacc50371121175d075552f39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2001-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a36cffbff1d46497a3b9331802ec216d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b797954a8d426484a2d90f80433d7f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_272e925726155210150ddcbd7a11a448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ab00d083482e4ba5f97a80081d839da |
| publicationDate |
2002-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0215231-A2 |
| titleOfInvention |
A method for patterning layers of semiconductor devices |
| abstract |
In a method for patterning layers of semiconductor devices, starting with a substrate with an Al-layer (6) (or Al alloy) and a layer of TiN (4) (or Ti (5)), the layer of TiN (4) is selectively etched with a chemistry comprising CF4 and Cl2. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7758763-B2 |
| priorityDate |
2000-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |