| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a819eda0adf22936a52362eeebb9fb4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2001-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_614f1e3941e0968af0bf417e1d61f4cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6a3a15572001a56b0f2ebf0353a77fb |
| publicationDate |
2002-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0213245-A1 |
| titleOfInvention |
Method of controlling stress in gallium nitride films deposited on substrates |
| abstract |
Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises provided a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without nay interruption in the supply. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2154270-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8153515-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6841001-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10128406-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004200384-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7271416-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2087507-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7335737-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2983195-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004015749-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101156721-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7030428-B2 |
| priorityDate |
2000-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |