http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02097871-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2001-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99ab350a6c92b627e88b7f8e3757bed9 |
| publicationDate | 2002-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-02097871-A2 |
| titleOfInvention | Structure and method for fabricating semiconductor devices |
| abstract | High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide spaced apart from the silicon wafer (22) by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24). The accommodating buffer layer (24) is lattice matched to both the underlying silicon wafer (22) and the overlying monocrystalline material layer (26). Any lattice mismatch between the accommodating buffer layer (24) and the underlying silicon substrate (22) is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate can include utilizing surfactant-enhanced epitaxy, epitaxial growth of single crystal silicon (26) onto single crystal oxide (24). |
| priorityDate | 2001-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 69.