| abstract |
An electrically operated programmable resistance memory element. In one embodiment of the invention the memory element includes an electrical contact having at least a first region (R1) with a first resistivity and a second region (R2) with a second resitivity higher than the first resistivity. The more resistivity second region (R2) is preferably adjacent to the memory material (290). In another embodiment of the invention the memory element includes an electrical contact having a raised portion extending to an end adjacent to the memory material. |