| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_22ef7457fecf87e3f8c13cb08666b17a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1310a656d47e82868b5b3c3d9e1ee7e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-905 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2002-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_107b4179f9a8b0943e0492d9cadb4374
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ba56a022b984ba4cf9dbfea7a5b6221 |
| publicationDate |
2002-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-02090615-A9 |
| titleOfInvention |
Duo-step plasma cleaning of chamber residues |
| abstract |
A method involving plasma cleaning of deposit residues in process chamber using duo-step wafer-less auto clean method is detailed. Specifically, the method involves cleaning the processing chamber by flowing a first gaseous composition with at least about 75% of fluorine-containing compound of the formula XyFz, into a processing chamber and then forming a first etcheant plasma which removes silicon and silicon based byproducts from the interior surfaces of the processing chamber. The method then involves flowing a second gaseous composition into the processing chamber with a composition of at least about 50% O2 and forming a plasma from the second gaseous composition to provide a second etchant plasma which removes carbon and carbon based byproducts from the interior surfaces of the processing chamber. A system configured to execute the two step cleaning process is also provided. |
| priorityDate |
2001-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |